Journal of Stress Analysis

Journal of Stress Analysis

Investigating the Effect of Laser Parameters on Nano-Machining of Silicon Carbide by Response Surface Method Using Molecular Dynamics Simulation

Document Type : Original Research Paper

Authors
M. Zolfaghari 1
H. Heydari 2
A. Vanaki Farahan 1
V. Tahmasbi 3
1 Department of Mechanical Engineering, Arak University, Arak, Iran
2 School of Mechanic Engineering, Shahrekord University, Shahrekord, Iran
3 Mechanical Engineering Department, Arak University of Technology, Arak, Iran
10.22084/jrstan.2024.27752.1241
Abstract
The ultra-precise machining process of parts is a very advanced method to achieve dimensional accuracy and surface smoothness in the nanometer range for the production of defense, aerospace, optics, and electronics parts. In this research, the nano-machining process of silicon carbide single crystal under the effect of laser is investigated using the molecular dynamics method. Investigating the effects of the parameters of diameter, pulse intensity, and laser advance speed on this process by the response surface method shows that by reducing the advance speed from 150 to 50 meters per second, the diameter increases from 40 to 80 angstroms and the laser pulse intensity increases from 4×108 to 109 W/cm2, the values of shear forces, thrust forces, and Von Mises stress of the workpiece are reduced by 36.1%, 23.2%, and 39.3%, respectively. In addition, when the diameter was 40 angstroms, the pulse intensity was 109 W/cm2, and the laser advance speed was 50 m/s, the hydrostatic stress and machining forces were minimized and the machining process was optimized. By comparing the conventional nano-machining and the optimal mode of the laser nano-machining process, the value of shear forces decreased from 1770 nano-Newtons to 1115 nano-Newtons and the value of thrust forces decreased from 1350 nano-Newtons to 1137 nano-Newtons. Finally, the structural changes investigated by the radial distribution function indicate that the laser-assisted nano-machining process produces fewer structural changes along the bonds.
Keywords
Nano-machining
Laser
Molecular dynamics
Silicon carbide
Response surface method
[1] A. O. Oluwajobi, ”Nanomachining technology development,” University of Huddersfield, 2012.
[2] E. Brinksmeier et al., ”Advances in modeling and simulation of grinding processes,” CIRP annals, vol. 55, no. 2, pp. 667-696, 2006.
[3] R. Rentsch, ”Nanoscale cutting,” Nano and Micromachining, pp. 1-26, 2009.
[4] M. Chamani, ”Three-dimensional multiscale modeling of nanoindentation,” Journal of Molecular Graphics and Modelling, vol. 117, p. 108324, 2022.
[5] S. Goel, X. Luo, R. L. Reuben, and W. B. Rashid, ”Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting,” Nanoscale research letters, vol. 6, no. 1, pp. 1-9, 2011.
[6] X. Luo, S. Goel, and R. L. Reuben, ”A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide,” Journal of the European Ceramic Society, vol. 32, no. 12, pp. 3423-3434, 2012.
[7] S. Z. Chavoshi and X. Luo, ”Molecular dynamics simulation study of deformation mechanisms in 3C–SiC during nanometric cutting at elevated temperatures,” Materials Science and Engineering: A, vol. 654, pp. 400-417, 2016.
[8] G. Xiao, S. To, and G. Zhang, ”Molecular dynamics modelling of brittle–ductile cutting mode transition: case study on silicon carbide,” International Journal of Machine Tools and Manufacture, vol. 88, pp. 214-222, 2015.
[9] H. Dai and G. Chen, ”A molecular dynamics investigation into the mechanisms of material removal and subsurface damage of nanoscale high speed laser-assisted machining,” Molecular Simulation, vol. 43, no. 1, pp. 42-51, 2017.
[10] Z. Wu, W. Liu, and L. Zhang, ”Revealing the deformation mechanisms of 6H-silicon carbide under nano-cutting,” Computational Materials Science, vol. 137, pp. 282-288, 2017.
[11] B. Zhu et al., ”A study on the surface quality and brittle–ductile transition during the elliptical vibration-assisted nanocutting process on monocrystalline silicon via molecular dynamic simulations,” RSC advances, vol. 7, no. 7, pp. 4179-4189, 2017.
[12] H. Dai, G. Chen, S. Li, Q. Fang, and B. Hu, ”Influence of laser nanostructured diamond tools on the cutting behavior of silicon by molecular dynamics simulation,” RSC advances, vol. 7, no. 25, pp. 15596-15612, 2017.
[13] L. N. Abdulkadir and K. Abou-El-Hossein, ”Observed edge radius behavior during MD nanomachining of silicon at a high uncut chip thickness,” The International Journal of Advanced Manufacturing Technology, vol. 101, no. 5, pp. 1741-1757, 2019.
[14] Y. Liu, B. Li, and L. Kong, ”A molecular dynamics investigation into nanoscale scratching mechanism of polycrystalline silicon carbide,” Computational Materials Science, vol. 148, pp. 76-86, 2018.
[15] B. Meng, D. Yuan, J. Zheng, and S. Xu, ”Molecular dynamics study on femtosecond laser aided machining of monocrystalline silicon carbide,” Materials Science in Semiconductor Processing, vol. 101, pp. 1-9, 2019.
[16] Z. Tian, X. Xu, F. Jiang, J. Lu, Q. Luo, and J. Lin, ”Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations,” Ceramics International, vol. 45, no. 17, pp. 21998-22006, 2019.
[17] L. Liu et al., ”MD simulation of stress-assisted nanometric cutting mechanism of 3C silicon carbide,” Industrial Lubrication and Tribology, 2019.
[18] S. Goel, S. Z. Chavoshi, and A. Murphy, ”Molecular dynamics simulation (MDS) to study nanoscale cutting processes,” in Nanofinishing Science and Technology: CRC Press, 2016, pp. 519-568.
[19] H. Dai, S. Li, and G. Chen, ”Comparison of subsurface damages on mono-crystalline silicon between traditional nanoscale machining and laserassisted nanoscale machining via molecular dynamics simulation,” Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 414, pp.
61-67, 2018.
[20] B. Liu, Y. Wang, H. Yang, and K. Jiang, ”Effect of Laser Power on Nanocutting Mechanism of Silicon Carbide Ceramic: A Molecular Dynamics Simulation,” Advanced Theory and Simulations, p. 2300613.
[21] A. P. Thompson et al., ”LAMMPS-a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales,” Computer Physics Communications, vol. 271, p. 108171, 2022.
[22] S. Goel, X. Luo, R. L. Reuben, and W. B. Rashid, ”Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting,” Nanoscale research letters, vol. 6, pp. 1-9, 2011.
[23] P. Erhart and K. Albe, ”Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide,” Physical Review B, vol. 71, no. 3, p. 035211, 2005.
[24] D. C. Montgomery, Design and analysis of experiments. John wiley & sons, 2017. [25] H. Dai, F. Zhang, and J. Chen, ”A study of ultraprecision mechanical polishing of single-crystal silicon with laser nano-structured diamond abrasive by molecular dynamics simulation,” International Journal of Mechanical Sciences, vol. 157, pp. 254-266, 2019.
[26] W. Cheong and L. Zhang, ”Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation,” Nanotechnology, vol. 11, no. 3, p. 173, 2000.
[27] S. Goel, X. Luo, A. Agrawal, and R. L. Reuben, ”Diamond machining of silicon: a review of advances in molecular dynamics simulation,” International Journal of Machine Tools and Manufacture, vol. 88, pp. 131-164, 2015.
[28] P.-Z. Zhu, C. Qiu, F.-Z. Fang, D.-D. Yuan, and X.-C. Shen, ”Molecular dynamics simulations of nanometric cutting mechanisms of amorphous alloy,” Applied surface science, vol. 317, pp. 432-442, 2014.
Journal of Stress Analysis
Volume 8, Issue 2
2024
Pages 19-40