The ultra-precise machining process of parts is a very advanced method to achieve dimensional accuracy and surface smoothness in the nanometer range for the production of defense, aerospace, optics, and electronics parts. In this research, the nano-machining process of silicon carbide single crystal under the effect of laser is investigated using the molecular dynamics method. Investigating the effects of the parameters of diameter, pulse intensity, and laser advance speed on this process by the response surface method shows that by reducing the advance speed from 150 to 50 meters per second, the diameter increases from 40 to 80 angstroms and the laser pulse intensity increases from 4×10⁸ to 10⁹ W/cm², the values of shear forces, thrust forces, and Von Mises stress of the workpiece are reduced by 36.1%, 23.2%, and 39.3%, respectively. In addition, when the diameter was 40 angstroms, the pulse intensity was 10⁹ W/cm², and the laser advance speed was 50 m/s, the hydrostatic stress and machining forces were minimized and the machining process was optimized. By comparing the conventional nano-machining and the optimal mode of the laser nano-machining process, the value of shear forces decreased from 1770 nano-Newtons to 1115 nano-Newtons and the value of thrust forces decreased from 1350 nano-Newtons to 1137 nano-Newtons. Finally, the structural changes investigated by the radial distribution function indicate that the laser-assisted nano-machining process produces fewer structural changes along the bonds.